Philips buk9107-55ate buk9907-55ate free download

File name buk9107-55ate_buk9907-55ate.pdf

BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 -- 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: BUK9107-55ATE in SOT426 (D2-PAK) BUK9907-55ATE in SOT263B. 2. Features s Typical on-state resistance 5.8 m s Q101 compliant s ESD protection s Monolithically integrated temperature sensor for overload protection. 3. Applications s Automotive and power switching: x 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)) x Protected drive for lamps. 4. Pinning information Table 1: Pinning - SOT426 and SOT263B simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb d a 2 anode (a) mb 3 drain (d) g 4 cathode (k) 1 2 3 4 5 5 source (s) mb mounting base; MBL317 s k connected to drain (d) Front view MBK127 1 5 MBL263 SOT426 (D2-PAK) SOT263B Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25